Article ID Journal Published Year Pages File Type
10411639 Solid-State Electronics 2011 6 Pages PDF
Abstract
► We study advanced SiGe bipolar devices irradiated in different bias configurations. ► Less damage seen with gammas in biased devices than in shorted or floating ones. ► Annealing differences are not enough to compensate the bias damage differences. ► Floating configuration should be avoided in gamma irradiations. ► Bias effects have not been observed in neutron irradiations.
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Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Combined effect of bias and annealing in gamma and neutron radiation assurance tests of SiGe bipolar transistors for HEP applications
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