| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411641 | Solid-State Electronics | 2011 | 5 Pages |
Abstract
The thermal properties of a phase-change random access memory (PCRAM) cell are dominated by the phase-change recording material. The SET/RESET resistances, the minimum width of the SET/RESET pulse, the threshold voltage and the maximum temperature of PCRAM cells are impacted by the thickness of the phase-change layer. In this paper, a PCRAM cell with different Ge-Sb-Te phase-change layer thickness are fabricated, and the electrical properties of the PCRAM cells are tested. The SET/RESET properties dependence of PCRAM cells on the thickness of the phase-change layer is investigated and compared for the low-power consumption of PCRAM.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
L.W. Qu, X.S. Miao, J.J. Sheng, Z. Li, J.J. Sun, P. An, Jiandong Huang, Daohong Yang, Chang Liu,