| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411643 | Solid-State Electronics | 2011 | 6 Pages |
Abstract
⺠The hybrid normally-off switch AlGaN/GaN MOS-HEMT combines two main advantages: ⺠The MOS gate control and the high 2DEG mobility in AlGaN/GaN drift region. ⺠Here, we present simple analytical modeling of the on-resistance of a hybrid MOS-HEMT. ⺠We investigate the layout, the MOS channel mobility, the effect of a high-k and the temperature. ⺠The model can aid to understand the device physics and is compatible with TCAD simulation packages.
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Authors
A. Pérez-Tomás, A. Fontserè,