| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411644 | Solid-State Electronics | 2011 | 4 Pages |
Abstract
⺠We evaluate degradation of poly-Si TFTs by comparing normal and reverse characteristics. ⺠Symmetrical normal and reverse characteristics indicate Joule-heating degradation. ⺠Asymmetrical characteristics indicate hot-carrier degradation. ⺠Degradation occurrence is contrasted between standard and fine TFTs. ⺠Behavior of the hot-carrier degradation is analyzed.
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Electrical and Electronic Engineering
Authors
Tomohiro Kasakawa, Hiroki Tabata, Ryo Onodera, Hiroki Kojima, Mutsumi Kimura, Hiroyuki Hara, Satoshi Inoue,