| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411658 | Solid-State Electronics | 2005 | 10 Pages |
Abstract
The paper presents the results of a systematic analytical characterization, supplemented by 2D device simulation, applied to novel device architecture: STacked Gate Oxide Silicon-On-Nothing (STGO SON) MOSFET with effective channel length down to 80Â nm. A new approach to explain the pertinent device physics is presented, which can facilitate device design and technology selection for enhanced performance. Numerical device simulation data, obtained using 2D Device simulator: ATLAS, for (a) scale length, (b) potential and electric field distribution and (c) threshold voltage were compared to validate the analytical formulation. Comparison with simulated results reveals excellent quantitative agreement.
Keywords
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Engineering
Electrical and Electronic Engineering
Authors
Poonam Kasturi, Manoj Saxena, R.S. Gupta,