Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411661 | Solid-State Electronics | 2005 | 7 Pages |
Abstract
Iron- and carbon-doped GaN and iron-doped Al0.2Ga0.8N irradiated by low energy electron beam of scanning electron microscope were studied by cathodoluminescence and electron beam-induced current techniques. Irradiation is shown to induce a systematic decay of the cathodoluminescence intensity, which is accompanied by increased electronic carrier diffusion length, indicating the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energies for irradiation-induced effects of 210, 230, and 360Â meV for GaN:C, GaN:Fe, and Al0.2Ga0.8N:Fe, respectively. These observations are consistent with trapping of non-equilibrium electrons on deep, non-ionized acceptor levels.
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Authors
Olena Lopatiuk, Andrei Osinsky, Amir Dabiran, Konstantin Gartsman, Isai Feldman, Leonid Chernyak,