Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411666 | Solid-State Electronics | 2005 | 4 Pages |
Abstract
We report on the fabrication of n-GaN/n-ZnO/p-GaN double heterostructure-based light-emitting diodes and their electroluminescence (EL) properties. The current-voltage characteristics of the fabricated diodes revealed rectifying behavior with a leakage current of 1.62Â ÃÂ 10â5Â A at â9Â V, a forward current density of 1.56Â ÃÂ 10â2Â A at 5Â V bias, and threshold and breakdown voltages of â¼3.2 and â¼11Â V, respectively. Under forward bias an intense EL was observed, the spectrum of which depended on the injection current. From the comparison of the electroluminescence and photoluminescence spectra of the double heterostructure layers we concluded that the observed EL emission is most probably a superposition of emissions originating from ZnO, n-GaN, and p-GaN layers of the double heterostructure.
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Authors
Ya.I. Alivov, Ã. Ãzgür, S. DogËan, C. Liu, Y. Moon, X. Gu, V. Avrutin, Y. Fu, H. Morkoç,