Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411668 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
Continuing down scaling in CMOS technology has resulted in an increasing and urgent need for a Spice-like reliability model that is capable of predicting the long-term degradation of MOS devices and ICs. In this paper, we develop such a model based on the industry standard BSIM3 model and empirical degradation expressions for the threshold voltage and mobility of MOSFETs. The model is implemented in Cadence Spectre via Verilog-A, and good agreements between the measured and simulated results have been obtained for devices fabricated from the 0.18-μm CMOS technology.
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Authors
Z. Cui, J.J. Liou,