Article ID Journal Published Year Pages File Type
10411678 Solid-State Electronics 2005 5 Pages PDF
Abstract
A quasi-analytical model addressed to predict the breakdown voltage in four-layer transient voltage suppressor (TVS) diodes based on the punch-through effect is reported in this paper. For breakdown voltage in excess of 1 V, a closed form expression is derived. In addition, the three-layer TVS diode can also be described with the developed model. Finally, results obtained from the model are in good agreement with simulation and experimental data.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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A quasi-analytical breakdown voltage model in four-layer punch-through TVS devices
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