Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411696 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
Mid-IR light sources with high optical power are required for many applications. We report here the mid-IR (3.8 μm) light emission from an interband cascade (IC) LED structure with an equivalent black body emissive temperature greater than 1050 K. The IC epitaxial structure for LED comprises of 9 or 18 periods of active regions separated by multilayer injection regions. We have made an 8 Ã 7 2D LED array with different mesa sizes. The light output as well as the efficiency increases with the increase of mesa size and the number of active/injection layers in IC LED structure.
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Authors
Naresh C. Das, Kim Olver, F. Towner,