Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411698 | Solid-State Electronics | 2005 | 11 Pages |
Abstract
In this paper, a numerical simulation of FinFET is carried out. This computational model is also applicable to nanowires. The non-equilibrium Green's function (NEGF) is used to handle the quantum transport along the channel, and 2-D Schrödinger equation is solved at the channel cross-section to obtain the electron density profile. With the 3-D Poisson's equation solved self-consistently, the model provides insights into the performance of FinFETs with ultra-small channel cross-dimension.
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Authors
Xue Shao, Zhiping Yu,