Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411710 | Solid-State Electronics | 2005 | 9 Pages |
Abstract
We propose an analytical expression of the local carrier density inside silicon and SiO2 films assuming surface-accumulation and inversion conditions to simulate the capacitance of the modern MOS system. We assume a three-dimensional electron gas system and discuss the penetration of the electron wave function into SiO2 or high-k material films. It is demonstrated that this penetration slightly influences the capacitance-voltage characteristics. We show how the wave function penetration influences MOS capacitance under accumulation and inversion conditions by proposing advanced local carrier density models for electrons and holes. We also address the influence of the interlayer between the high-k material and the silicon substrate.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Yasuhiko Nakamori, Kohei Moriguchi, Kenji Komiya, Yasuhisa Omura,