Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411726 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
The effects of trichloroethylene (TCE) concentration on the thermal oxidation of SiC are studied in terms of the oxide quality and the properties of the SiO2/SiC interface. It is found for the first time that as TCE concentration increases, the flat-band voltage, oxide-charge density and interface-state density all exhibit a turnaround behavior. For TCE ratio (flow rate of N2Â +Â TCE to flow rate of O2) less than 0.01, the flat-band voltage increases with TCE concentration while the oxide-charge and interface-state densities decrease. However, for TCE ratio larger than 0.05, opposites occur with the flat-band voltage decreasing and the two densities increasing. The TCE-induced reductions of the oxide charges and interface states at 0.1-0.5Â eV below the conduction-band edge are 93% and 24-99%, respectively, for a TCE ratio of 0.05. Moreover, as TCE ratio increases from 0 to 0.2, the oxide resistance against stress-induced damage increases. In summary, the TCE oxidation with appropriate TCE concentration can reduce the oxide charges and improve the interface properties and oxide reliability.
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Authors
B.L. Yang, L.M. Lin, H.B. Lo, P.T. Lai,