Improved characterization methods for unipolar directly bonded semiconductor junctions

Improved methods for electrical characterization of unipolar semiconductor junctions with interface states and interfacial-barrier punctures at the junction plane are described. Compared to the previous description of the methods, two regular procedures for making allowance for the leakage current through punctures are reported. With these procedures, measurements of the quasi-static current-voltage characteristic of a junction, together with its high-frequency (h.f.) capacitance and conductance, permit determination of the fraction of the total direct current that flows through punctures, the spreading resistance of the system of punctures, the doping profile in the vicinity of the interface, and the energy distribution of interface states on the areal part of the junction with the potential barrier. Results yielded by the methods in their full formulation for real p-Si/p-Si directly bonded structures are reported.