| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411735 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
An analytical two-dimensional model is developed to explain the minority-carrier exclusion effect in circular spreading-resistance temperature (SRT) sensor fabricated on thin silicon film. The model can be used to show the relation between minority-carrier exclusion length and maximum operating temperature of the sensor under different bias currents and different doping levels. Comparison is made between the proposed model and the conventional one-dimensional model used for similar sensors with rectangular shape. Experimental results show that the new model is more accurate than the one-dimensional model for predicting the characteristics of the circular SRT sensor.
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Authors
Z.H. Wu, P.T. Lai, Bin Li, P.C.K. Kwok, B.Y. Liu, X.R. Zheng,