Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411737 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
A simple current-blocking process was presented and proved to increase the luminous intensity of AlGaInP light-emitting diodes (LEDs). Deeper blocking depth would dramatically raise the luminous intensity of devices. If the chip size was small, however, deeper blocking depth would increase the junction temperature under a higher operation current. On the whole, with a current-blocking layer embedded in the current-spreading layer, the luminous intensity increased to 1.19 and 1.13 times at 20 mA for 9 mil (280 Ã 280 μm2) and 16 mil (406 Ã 406 μm2) devices respectively, compared with that of the conventional structures. In terms of energy-saving, LEDs with the current-blocking layer can save roughly 42% of energy consumption compared with that having a conventional structure.
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Authors
H.C. Wang, Y.K. Su, Y.H. Chung, C.L. Lin, W.B. Chen, S.M. Chen,