Article ID Journal Published Year Pages File Type
10411743 Solid-State Electronics 2005 4 Pages PDF
Abstract
In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Authors
, , ,