Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411743 | Solid-State Electronics | 2005 | 4 Pages |
Abstract
In this Letter, we present a simulation study of the electrical characteristics of ultimately scaled carbon nanotube field-effect transistors. Devices with Schottky contacts and doped source/drain contacts are compared. We show that for small bias devices with doped source/drain contacts exhibit a better on- as well as off-state compared to devices with Schottky contacts. Both device types, however, show a poor off-state for larger bias. We will discuss the relevant transport mechanisms involved and explain our observations.
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Authors
J. Knoch, S. Mantl, J. Appenzeller,