Unified current equation for predictive modeling of submicron MOSFETs

For short-channel submicron MOS devices, we present a unified current equation, which covers both weak and strong inversion. The current in weak inversion is controlled by the subthreshold slope, for which we derive a new physics-based, predictive model. Furthermore, a new model for the carrier mobility is presented, which allows to derive closed-form current equations with good scalability. The approaches have been implemented in the compact model PREDICTMOS and are qualified by comparison with numerical device simulations and measurements.