Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10411921 | Solid-State Electronics | 2005 | 8 Pages |
Abstract
In this paper we present a 3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories. First, the simulation methodology is introduced and validated against experimental data. Then, physical effects that significantly impact the coupling calculation are pointed out. Finally, the method is applied to a sensitivity study of both gate coupling and gate cross-interference in different non-volatile memory architectures showing the increasing importance of this kind of analysis in designing more advanced technologies.
Related Topics
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Engineering
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Authors
Andrea Ghetti, Luca Bortesi, Loris Vendrame,