| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10411941 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
Pt/4H-SiC Schottky diodes were fabricated and their current-voltage (I-V) characteristics within the temperature range of 300-480 K were subsequently measured and analyzed. Diodes' parameters (barrier height, ideality factor and series resistance) were extracted from the I-V curves using Cheung's method. Based on I-V and high-frequency capacitance-voltage (C-V) measurements the interface states distribution in the semiconductor bandgap was determined. Analysis of obtained results indicates the presence of thin interfacial layer between metal and semiconductor.
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Electrical and Electronic Engineering
Authors
Mariusz Sochacki, Adam Kolendo, Jan Szmidt, Aleksander Werbowy,