| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10413347 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
Source-to-drain current including tunneling in deca-nanometer double-gate MOSFETs is studied using a Monte Carlo approach for the Wigner transport equation. This approach allows the effect of scattering to be included. The subband structure is calculated by means of post-processing results from the device simulator Minimos-NT, and the contribution of the lowest subband is determined by the quantum transport simulation. Intersubband coupling elements are explicitly calculated and proven to be small in double-gate MOSFETs. The simulation results clearly show an increasing tunneling component of the drain current with decreasing gate length. For long gate length the semi-classical result is recovered.
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Authors
V. Sverdlov, A. Gehring, H. Kosina, S. Selberherr,