| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10413366 | Solid-State Electronics | 2005 | 9 Pages |
Abstract
In the present paper a temperature dependent analytical model for poly-crystalline silicon TFT incorporating the short channel effects and inverse narrow width effects is developed. The temperature dependent modeling parameters and the effect of fringing capacitances are considered to evaluate the drain current, transconductance and cut-off frequency etc. The effect of change in mobility with gate voltage has also been incorporated and the results so obtained show excellent match with the experimental results thus proving the validity of our model.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Amit Sehgal, Tina Mangla, Mridula Gupta, R.S. Gupta,