Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413371 | Solid-State Electronics | 2005 | 7 Pages |
Abstract
A simple analytical model for calculating the high-frequency barrier capacitance of GaAs thin-film epitaxial structures both in the dark and under extrinsic illumination is presented. The model accounts for the space charge region at the film-substrate interface. The model shows that the photocapacitance of these structures has the form of a narrow peak located at the bias voltage, at which the barrier capacitance drops abruptly with reverse bias. The underlying physical mechanism is discussed. A method for predicting the MESFET threshold voltage based on the measured photocapacitance is proposed and tested.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Nikolai B. Gorev, Inna F. Kodzhespirova, Evgeny N. Privalov, Nina Khuchua, Levan Khvedelidze, Michael S. Shur,