Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413372 | Solid-State Electronics | 2005 | 6 Pages |
Abstract
It is often of interest to extract MOSFET parameters such as channel mobility in situations where the source/drain resistances are not negligible and may be non-linear. We propose and demonstrate a new technique that avoids difficulties with non-linear source/drain resistance by conducting all measurements under constant drain current conditions.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Chao-Yang Lu, James A. Jr.,