| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10413373 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
A novel functional InGaP/GaAs/InGaAs step-compositional-emitter heterojunction bipolar transistor (HBT) is fabricated and demonstrated. Due to the avalanche multiplication and discontinuous confinement effects for electrons in the InGaAs quantum well and at InGaP/GaAs heterojunction, respectively, an interesting triple-route S-shaped negative-differential-resistance switch is observed under inverted operation mode at room temperature. In addition, the excellent transistor performances including a high current gain of 220 and a low offset voltage of 60Â mV are achieved under normal operation mode. Consequently, the device could be used for signal amplifier under normal operation mode and multiple-valued logic circuit application under inverted operation mode.
Keywords
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jung-Hui Tsai, King-Poul Zhu, Ying-Cheng Chu, Shao-Yen Chiu,