Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413374 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
In this paper, a new lateral insulated gate bipolar transistor (LIGBT) structure is proposed to suppress substrate currents in a junction isolated technology by using two buried layers on top of each other. This structure not only allows to reduce the substrate to anode current ratio to less than 10â7, it also yields a device with a large safe operating area and a fast turn-off. Because of the two buried layers, the proposed LIGBT can be used as a floating (above substrate potential) device. Furthermore, the LIGBT is introduced in an existing 80 V smart power technology without the costly need of defining new layers. It has also been shown that the proposed LIGBT can compete with vertical DMOS (VDMOS) devices when used as a large driver. Together with an equivalent circuit, two dimensional simulation has been used to explain the observed device's substrate current behaviour.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
B. Bakeroot, J. Doutreloigne, P. Moens,