Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413375 | Solid-State Electronics | 2005 | 8 Pages |
Abstract
Additional current-voltage combined with capacitance/conductance-voltage analyses as well as constant current stress measurements have suggested the presence of hole traps with a high capture cross section (10â13Â cm2) in the bulk of the oxide at 5Â mTorr. This behavior is not observed at 2Â mTorr.
Related Topics
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Engineering
Electrical and Electronic Engineering
Authors
D. Goghero, A. Goullet, J.P. Landesman,