Article ID Journal Published Year Pages File Type
10413375 Solid-State Electronics 2005 8 Pages PDF
Abstract
Additional current-voltage combined with capacitance/conductance-voltage analyses as well as constant current stress measurements have suggested the presence of hole traps with a high capture cross section (10−13 cm2) in the bulk of the oxide at 5 mTorr. This behavior is not observed at 2 mTorr.
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Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
Preview
Structural and electrical properties of SiO2 films deposited on Si substrates from tetraethoxysilane/oxygen plasmas
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