Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10413392 | Solid-State Electronics | 2005 | 5 Pages |
Abstract
We propose a design oriented charge-based model for undoped DG MOSFETs under symmetrical operation that aims at giving a comprehensive understanding of the device from the design strategy. In particular, we introduce useful normalizations for current and charges that in turn lead to very simple relationships among the physical quantities. Finally, we emphasize on the link that exists between this approach and the EKV formalism derived for bulk MOSFETs, which in turn leads to the unique gms/ID design methodology for DG architectures.
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Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Jean-Michel Sallese, François Krummenacher, Fabien Prégaldiny, Christophe Lallement, A. Roy, C. Enz,