| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10418763 | Journal of Materials Processing Technology | 2012 | 5 Pages |
Abstract
⺠Vacuum refining of Si simulating industrial environment is investigated. ⺠Fundamental data regarding elemental vapor pressure in Si is summarized. ⺠Fundamental data for overall rate constant substantial for kinetic analyses were experimentally confirmed for 11 elements at four different melt temperatures. ⺠New experimental data for concentration of 28 elements in liquid silicon for various temperatures is provided. ⺠Refractory material for ultra-pure Si treatment is analyzed and recommended.
Related Topics
Physical Sciences and Engineering
Engineering
Industrial and Manufacturing Engineering
Authors
Aleksandar M. MitraÅ¡inoviÄ, Ryan D'Souza, Torstein A. Utigard,