Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10420601 | Precision Engineering | 2013 | 5 Pages |
Abstract
Single grit diamond scribing experiments were carried out to understand the effects of SiC and Si3N4 inclusions in diamond wire sawing or cutting of photovoltaic multicrystalline silicon (mc-Si) substrate material. Results show that hexagonal rod-type Si3N4 inclusions can significantly increase the cutting force and lead to large scale localized brittle fracture of the mc-Si substrate. In contrast, SiC filament-type inclusions do not affect the scribing/cutting process. Si3N4 fibers are found to be flexible and are not cut by diamond scribing. Explanations for the observations are given based on the material properties of mc-Si, diamond and inclusions. The detrimental effects of SiC and Si3N4 inclusions on diamond wire sawing are also discussed.
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Authors
Hao Wu, Shreyes N. Melkote, Steven Danyluk,