Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10428447 | Optik - International Journal for Light and Electron Optics | 2016 | 9 Pages |
Abstract
Herein Se2â-doped PbS thin films obtained by using the green chemical bath approach are reported. Morphological, optical and structural properties were investigated by atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD) and optical absorption. Three impurity levels were prepared by changing the relative volume of the solution containing Se2â ions in the PbS growing solution. XRD showed growth of all films with the zinc-blende phase. Changes in the grain size (â¼27-14Â nm) and band gap energy (â¼1.4-2.24Â eV) were observed. The absorbance in doped films, showing excitonic peaks are due to higher energy transitions from 1Se â1Sh. Gibbs energy calculation for the Se2â doping PbS process was also investigated.
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Authors
O. Portillo Moreno, R. Gutiérrez Pérez, M. Chávez Portillo, G. Hernández Téllez, E. Rubio Rosas, S. Cruz Cruz, A.Moreno RodrÃguez,