Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10428518 | Optik - International Journal for Light and Electron Optics | 2016 | 7 Pages |
Abstract
Ni-doped PbS (PbS:Ni) thin films were deposited on glass substrates by cost-effective spray pyrolysis technique with different concentrations of Ni (0, 2, 4, 6 and 8 at.%). XRD studies reveal that all the films exhibit face centered cubic structure. The preferential orientation of the undoped PbS film is along the (2 0 0) plane and for the doped films the preferential orientation is along the (1 1 1) plane. Optical studies show that the film transparency increases with increase in Ni doping concentration and the optical band gap exhibit a red shift from 2.26 eV to 2.06 eV. Electrical studies show that all the as deposited PbS:Ni thin films have resistivity in the order of 10â1 Ω-cm. Raman studies reveal that the peak at 161 cmâ1 might have been originated from the combination of longitudinal and transverse acoustic phonon modes in PbS crystals. Increased transparency and nominal resistivity values obtained make PbS:Ni thin films suitable for optoelectronic applications especially in solar cells.
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Authors
C. Rajashree, A.R. Balu,