| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10429279 | Biosensors and Bioelectronics | 2012 | 6 Pages |
Abstract
⺠Solution gate-FET using a boron δ-doped channel on (1 1 1) diamond was fabricated. ⺠Enhancement mode operation with channel pinch-off and drain-source current saturation. ⺠Maximum gain and transconductance of 3 and 200 μS/mm were achieved. ⺠Showed a pH sensitivity of 36 mV/pH, displaying fast temporal responses. ⺠Demonstrated stability against anodic oxidation.
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Authors
Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman,