| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10482233 | Physica A: Statistical Mechanics and its Applications | 2005 | 6 Pages |
Abstract
Plasma-based ion implantation was used to synthesize the manganese nitride Mn4N by implanting nitrogen in manganese layers first deposited by sputtering assisted by multi-dipolar microwave plasma. The structural characterization of the layer has been performed using X-ray diffraction at grazing incidence and XPS. The magnetic properties have been measured using a SQUID susceptometer. In parallel, a FLAPW method has been used to calculate the theoretical magnetic state of Mn4N. The modeling results are compared with neutron diffraction and magnetization saturation measurements.
Related Topics
Physical Sciences and Engineering
Mathematics
Mathematical Physics
Authors
D. Vempaire, D. Fruchart, R. Gouttebarron, E.K. Hlil, S. Miraglia, L. Ortega, J. Pelletier,