| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10565962 | Organic Electronics | 2014 | 6 Pages |
Abstract
- Top-gate poly(3-alkylthiophene) (P3AT) FETs are fabricated by a spin-coating method.
- The top-gate P3AT FETs exhibit high field-effect mobility and operational stability.
- High performance is obtained irrespective of the permittivity of the gate insulator.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Kenichiro Takagi, Takashi Nagase, Takashi Kobayashi, Hiroyoshi Naito,