| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566077 | Organic Electronics | 2014 | 6 Pages |
Abstract
- Modelling and simulation of gate leakage currents of solution-processed OTFTs.
- We analyze gate leakage currents and show their influence on a circuit.
- A model for electrical simulation is developed and parameter extraction presented.
- Simulation enhancement is presented by comparison with measurement data.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Stefan Hengen, Milan Alt, Gerardo Hernandez-Sosa, Jürgen Giehl, Uli Lemmer, Norman Mechau,