High-mobility n-channel organic field-effect transistors based on epitaxially grown C60 films

We present C60-based n-channel organic field-effect transistors with mobility in the range of 0.4-1 cm2 V−1 s−1. A solution-processed organic dielectric divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) was used as a gate dielectric and C60 films were grown on top by hot wall epitaxy. Devices characterised in inert atmosphere conditions show high stability with an on/off ratio >104. The determined mobility values are nearly gate voltage independent.