| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566366 | Organic Electronics | 2013 | 7 Pages |
Abstract
- A non-volatile multi-bit organic ferroelectric memory with binary readout from a simple capacitor structure is introduced.
- The functioning of the device is based on the applicability of the dipole switching theory (DST).
- All basic properties of the device were measured and successfully modeled in the framework of the DST.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Vsevolod Khikhlovskyi, Andrey V. Gorbunov, Albert J.J.M. van Breemen, René A.J. Janssen, Gerwin H. Gelinck, Martijn Kemerink,