| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566527 | Organic Electronics | 2013 | 8 Pages |
Abstract
- Controlled solvent vapor annealing (C-SVA) was used to optimize morphology for the PSCs based on PSBTBT/PC71BM.
- The PCE is improved from 4.14% for the pristine device to 5.40% for the device under C-SVA treatment.
- The favorable blend composition at the anode interface of C-SVA treated device is beneficial to device performance.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Hongying Lv, Xiaoli Zhao, Wentao Xu, Hui Li, Jiayue Chen, Xiaoniu Yang,