| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566628 | Organic Electronics | 2013 | 7 Pages |
Abstract
⺠We characterize roles of the buried interface between P3HT and ITO by transient photovoltage (TPV). ⺠We observed a negative TPV in ITO/P3HT/Al, which demonstrates that ITO/P3HT contact is electron extracting. ⺠The theoretical study is conducted to reveal a reduced electron barrier by 0.5 eV for ITO/P3HT contact. ⺠Band bending and dipole formation are two possible reasons to reduce the electron barrier. ⺠The study paves a way to characterize the buried interface in solution processable optoelectronics.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Bao-Fu Ding, Wallace C.H. Choy, Wai-Ming Kwok, Yao Yao, Keith Y.F. Ho, Chang-Qin Wu,