Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10566689 | Organic Electronics | 2012 | 6 Pages |
Abstract
⺠Graphene oxide (GO) as charge storage nodes in pentacene based nonvolatile memory transistors. ⺠Role of charge tunneling layers e.g. polymethylmethacrylate (PMMA) and polyvinylphenol (PVP). ⺠PMMA performed better than PVP better as charge tunneling layer. ⺠Electron trapping in GO is responsible for creating the memory effect.
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Chemistry (General)
Authors
Yunhwan Park, Dipti Gupta, Changhee Lee, Yongtaek Hong,