Flexible thin-film transistors using multistep UV nanoimprint lithography

► ► A multistep UV nanoimprint lithography process has been demonstrated for the fabrication of flexible thin-film transistors. ► TFTs with channel lengths from 5 μm down to 250 nm have been fabricated on Si and PEN foil. ► On-demand imprint planarization was introduced on flexible foils. ► Charge carrier mobilities of 0.06-0.92 cm2 V−1 s−1 were obtained on Si. ► Charge carrier mobilities of 0.16-0.56 cm2 V−1 s−1 were obtained on PEN foil.