| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566900 | Organic Electronics | 2012 | 10 Pages |
Abstract
⺠Fabrication of low-switching-voltage organic ferroelectric field effect transistors. ⺠Two orders of magnitude difference in ID between on and off states at VG = 0 V. ⺠C-V measurements confirm stability of ferroelectric polarization in depletion. ⺠Apparent loss of polarization due to neutralization by negative interface charge. ⺠Negative charges migrate through the ferroelectric when transistor in accumulation.
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Authors
R. Kalbitz, R. Gerhard, D.M. Taylor,