| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566927 | Organic Electronics | 2011 | 6 Pages |
Abstract
⺠OFET based on pentacene with CuO embeded layer is reported. ⺠Formation of CT complexes lead to the improving performance of the device. ⺠Electrons are trapped in CuO act as a floating gate voltage which influences the VTH. ⺠The VTH of CuO-embeded OFET depended on the trapped electron population in CuO. ⺠Systematic tuning on VTH of CuO-embeded OFET is achieved by adjusting positive VGS0. ⺠Trapped electrons are hard to release, VTH are stable under constant-voltage bias-stress.
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Authors
Guozheng Nie, Junbiao Peng, Linfeng Lan, Ruixia Xu, Jianhua Zou, Yong Cao,