| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566937 | Organic Electronics | 2011 | 9 Pages |
Abstract
⺠A relationship between the hysteresis in the Id-Vg curves and the Ig was found. ⺠We studied transistors using either PVA or PVA cross-linked as the gate dielectric. ⺠The charge motion is blocked by insertion of SiO2 between the PVA layer and the gate. ⺠SCLC characterization of the dielectrics and simulations of the devices were performed. ⺠Analysis of the chemical nature of the pentacene-dielectric interface is presented.
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Authors
Emanuele Orgiu, Simone Locci, Beatrice Fraboni, Erika Scavetta, Paolo Lugli, Annalisa Bonfiglio,