| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10566941 | Organic Electronics | 2011 | 7 Pages |
Abstract
⺠PVT shows low leakage current and high breakdown voltage. ⺠Both n-channel and p-channel OFET devices give low threshold voltage and are lack of hysteresis. ⺠Excellent film formation property of PVT allows for fabricating low voltage operation OFET devices. ⺠All solution processed polymer ambipolar OFET device is realized via layer by layer coating.
Related Topics
Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Mamatimin Abbas, Gulbeden Cakmak, Nalan Tekin, Ali Kara, Hasan Yuksel Guney, Elif Arici, Niyazi Serdar Sariciftci,