Photopatternable, highly conductive and low work function polymer electrodes for high-performance n-type bottom contact organic transistors

► We demonstrate the use of n-type N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). ► Because PEDOT:Tos has a very low work function, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold, leading to a reduced contact resistance in the transistor. ► The transistor based on PEDOT:Tos showed electron mobility of 0.145 cm2/Vs, which was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).