Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10566946 | Organic Electronics | 2011 | 4 Pages |
Abstract
⺠We demonstrate the use of n-type N,Nâ²-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) bottom contact organic field-effect transistors that employ photopatternable highly conductive poly(3,4-ethylenedioxythiophene):tosylate (PEDOT:Tos) source/drain electrodes characterized by a very low work function (4.3 eV). ⺠Because PEDOT:Tos has a very low work function, the electron injection barrier between PTCDI-C13 and PEDOT:Tos was 0.25 eV lower than that between PTCDI-C13 and gold, leading to a reduced contact resistance in the transistor. ⺠The transistor based on PEDOT:Tos showed electron mobility of 0.145 cm2/Vs, which was 16 times higher than that in transistors based on gold (0.009 cm2/Vs).
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Physical Sciences and Engineering
Chemistry
Chemistry (General)
Authors
Kipyo Hong, Se Hyun Kim, Chanwoo Yang, Tae Kyu An, Hyojung Cha, Chanjun Park, Chan Eon Park,