Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10618737 | Synthetic Metals | 2005 | 4 Pages |
Abstract
Polymer field effect transistors (FETs) exhibit several interesting features upon photo-excitation. We review recent results from our laboratory of these polymer photo-FETs and present spectroscopic evidence to verify proposed mechanisms of charge-carrier generation and transport. We present results, which suggest that charge generation and recombination processes depend on the operating mode of FET. The location of photoinduced charge generation is probed using the intensity modulated photocurrent spectrum as a function of gate voltage with light incident from either side of the indium tin oxide (ITO)-gated FET structure.
Related Topics
Physical Sciences and Engineering
Materials Science
Biomaterials
Authors
S. Dutta, K.S. Narayan,