Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10620227 | Acta Materialia | 2013 | 7 Pages |
Abstract
In situ deformation transmission electron microscopy was used to study the attraction behavior of GaAs semiconductor nanowires (NWs). The NWs demonstrated an interesting phenomenon of either head-to-head or body-to-body attraction at distances that depend on the NW diameters. The NWs with a diameter of â¼25 nm attracted at a distance of â¼25 nm, while large-diameter NWs of â¼55 nm showed no obvious attraction. The underlying mechanism governing the attraction of the NWs is proposed and discussed with a mechanistic model. The diameter dependence on the NW attraction behavior is discussed. The finding provides an understanding of the Ampère force in nanostructured materials caused by an electron-beam-induced current while technologically it provides useful hints for designing NW-based devices according to the diameter-dependent attraction behavior of NWs.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Bin Chen, Qiang Gao, Li Chang, Yanbo Wang, Zibin Chen, Xiaozhou Liao, Hark Hoe Tan, Jin Zou, Simon P. Ringer, Chennupati Jagadish,