Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10624980 | Ceramics International | 2014 | 12 Pages |
Abstract
GaN nanowires were synthesized on sapphire substrates by chemical vapor deposition. The selective growth of GaN nanowires was obtained through an N-Ga2O3 layer prepared by radio frequency magnetron sputtering. The X-ray diffraction (XRD) and Raman measurements indicated the GaN nanowires to be all indexed to the hexagonal wurtzite structure. The photoluminescence (PL) spectra were composed of a strong UV emission peak (365Â nm) and a weak yellow luminescence (YL) band (~600Â nm). The selective growth mechanism of GaN nanowires was briefly discussed.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Rui Sun, Hua-Yu Zhang, Gui-Gen Wang, Jie-Cai Han, Can Zhu, Xiao-Peng Liu, Lin Cui,